HOME    About this site    mypage    Japanese    library    university    Feedback

University of the Ryukyus Repository >
Faculty of Engineering >
Bulletin >
Bulletin of the Faculty of Engineering, University of the Ryukyus >
No. 31 (1986/03) >

 
Title :Si-doped GaAs単結晶の転位の上昇と二次元欠陥 -X線トポグラフィーによる観測-
Title alternative :Observation of Dislocation Climbing with Two-dimensional Defects in Si-doped GaAs Crystal by X-ray Topography
Authors :前濱, 剛廣
安冨祖, 忠信
Authors alternative :Maehama, Takehiro
Afuso, Chushin
Issue Date :Mar-1986
Abstract :A formation mechanism of two-dimensional defects which are produced in a Si-doped GaAs crystal during heat-treatment has been studied by X-ray diffraction topography. The Si-doped GaAs crystal was heat-treated for 72 hours at 1000℃ under 600 Torr arsenic pressure. X-ray diffraction topographs of the crystal were taken before and after heat-treatment. Then the surface of the crystal was etched by RC-1 etchant for revealing figures of defects. From these topographs we find that dislocations in the crystal climb to absorb some kind of point defects during heat-treatment. From etch figures we also find that two-dimensional defects which are never observed in the X-ray diffraction topograph are formed over tracts of dislocations climbing.
Type Local :紀要論文
ISSN :0389-102X
Publisher :琉球大学工学部
URI :http://hdl.handle.net/20.500.12000/12488
Citation :琉球大学工学部紀要 no.31 p.51 -60
Appears in Collections:No. 31 (1986/03)

Files in This Item:

File Description SizeFormat
No31p051.pdf1862KbAdobe PDFView/Open