HOME    About this site    mypage    Japanese    library    university    Feedback

University of the Ryukyus Repository >
Faculty of Engineering >
Bulletin >
Bulletin of the Faculty of Engineering, University of the Ryukyus >
No. 28 (1984/10) >

 
Title :Si-doped GaAs単結晶の転位の上昇と二次元欠陥 -エッチング法による観測-
Title alternative :Observation of Dislocation Climbing with Two-dimensional Defects in Si-doped GaAs Crystal by Etching Technique
Authors :前濱, 剛廣
Authors alternative :Maehama, Takehiro
Issue Date :Oct-1984
Abstract :Si-doped and non-doped GaAs crystals are heat-treated for 72 hours at 1000℃ under 600 Torr arrsenic pressure. Arrow-shaped etch figures, which have never been found on as-grown Si-doped GaAs crystals, are formed on As (1^^-1^^-1^^-) surface of heat-treated Si-doped GaAs crystal, but these etch figures did not appear on non-doped case. The arrow-shaped etch figure corresponds to a two-dimensional defect which is formed by dislocation clibming. The dislocation clibming mechanism and the formation mechanism of the two-dimensional defect are discussed precisely and a model of the formation is proposed. which concerns with Si-impurities and As interstitials.
Type Local :紀要論文
ISSN :0389-102X
Publisher :琉球大学工学部
URI :http://hdl.handle.net/20.500.12000/12489
Citation :琉球大学工学部紀要 no.28 p.47 -53
Appears in Collections:No. 28 (1984/10)

Files in This Item:

File Description SizeFormat
No28p047.pdf723KbAdobe PDFView/Open