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University of the Ryukyus Repository >
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Bulletin of the Faculty of Engineering, University of the Ryukyus >
No. 28 (1984/10) >
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| Title | : | Si-doped GaAs単結晶の転位の上昇と二次元欠陥 －エッチング法による観測－ |
| Title alternative | : | Observation of Dislocation Climbing with Two-dimensional Defects in Si-doped GaAs Crystal by Etching Technique |
| Authors | : | 前濱, 剛廣 |
| Authors alternative | : | Maehama, Takehiro |
| Issue Date | : | Oct-1984 |
| Abstract | : | Si-doped and non-doped GaAs crystals are heat-treated for 72 hours at 1000℃ under 600 Torr arrsenic pressure. Arrow-shaped etch figures, which have never been found on as-grown Si-doped GaAs crystals, are formed on As (1^^-1^^-1^^-) surface of heat-treated Si-doped GaAs crystal, but these etch figures did not appear on non-doped case. The arrow-shaped etch figure corresponds to a two-dimensional defect which is formed by dislocation clibming. The dislocation clibming mechanism and the formation mechanism of the two-dimensional defect are discussed precisely and a model of the formation is proposed. which concerns with Si-impurities and As interstitials. |
| Type Local | : | 紀要論文 |
| ISSN | : | 0389-102X |
| Publisher | : | 琉球大学工学部 |
| URI | : | http://hdl.handle.net/20.500.12000/12489 |
| Citation | : | 琉球大学工学部紀要 no.28 p.47 -53 |
| Appears in Collections | : | No. 28 (1984/10)
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| No28p047.pdf | | 723Kb | Adobe PDF | View/Open |
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