HOME    About this site    mypage    Japanese    library    university    Feedback

University of the Ryukyus Repository >
Faculty of Engineering >
Bulletin >
Bulletin of the Faculty of Engineering, University of the Ryukyus >
No. 24 (1982/09) >

 
Title :転位線のエッチング速度
Title alternative :Etching Rate along Dislocations
Authors :前浜, 剛廣
Authors alternative :Maehama, Takehiro
前濱, 剛廣
Issue Date :Sep-1982
Abstract :A measurement method is proposed for etching rate along a dislocation. The method is applied to dislocation lines and partial dislocation loops in {111}n-GaAs wafers with RC-1 etchant. The results show that the etching rate of the dislocation perpendicular to the etched surface is about 1.5 times as large as the surface etching rate. The results show also that the activation energy of etching dislocation is smaller than the activation energy of the surface. A formula is proposed which correlates the etching rate of the dislocation to the angle between the dislocation and the surface. From the formula the critical angle under which the dislocation etch pits are not formed is estimated.
Type Local :紀要論文
ISSN :0389-102X
Publisher :琉球大学工学部
URI :http://hdl.handle.net/20.500.12000/12490
Citation :琉球大学工学部紀要 no.24 p.85 -92
Appears in Collections:No. 24 (1982/09)

Files in This Item:

File Description SizeFormat
No24p085.pdf950KbAdobe PDFView/Open