Analysis of stability in a solute field under liquid phase epitaxy: University of the Ryukyus Repository


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Title	:	Analysis of stability in a solute field under liquid phase epitaxy
Authors	:	Saitou, Masatoshi Motoyama, S
Issue Date	:	15-Nov-1998
Abstract	:	We reported a critical gap length between two silicon substrates at which no epitaxial layer was grown on the upper silicon substrate [M. Saitou and S. Itomura, J. Mater. Sci.: Mater. Electron. 8, 321 (1997)]. In this study, using perturbation theory and a numerical solution, the abrupt change in the growth rate is investigated. We find that a nondimensional parameter GrSc partial derivative c/partial derivative y determines the instability in a solute field, and that under a critical value of this parameter no epitaxial growth on the substrate sets in because diffusion governs the mass transport of the silicon solute.
URL	:	http://scitation.aip.org/japo/
Type Local	:	雑誌掲載論文
ISSN	:	00218979
Publisher	:	American Institute of Physics
URI	:	http://hdl.handle.net/20.500.12000/160
Citation	:	JOURNAL OF APPLIED PHYSICS Vol.84 no.10 p.5780 -5784
Appears in Collections	:	Peer-reviewed Journal Articles (Faculty of Engineering)

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