New Arrival
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Rule-based Assembly for Short-read Datasets Obtained with Multiple Assemblers and k-mer Sizes / Ohshiro, Ayako,Afuso, Hitoshi,Okazaki, Takeo,Nakamura, Morikazu -- Information Processing Society of Japan (IPSJ)，2017 ，IPSJ Transactions on Bioinformatics Vol.10 p.9-15 雑誌掲載論文
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A Petri Net Approach to Generate Integer Linear Programming Problems / Nakamura, Morikazu,Tengan, Takeshi,Yoshida, Takeo -- The Institute of Electronics, Information and Communication Engineers，1-Feb-2019 ，IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences Vol.E102-A no.2 p.389-398 雑誌掲載論文
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Automatic Generation of Mixed Integer Programming for Scheduling Problems Based on Colored Timed Petri Nets / Porco, Andrea Veronica,Ushijima, Ryosuke,Nakamura, Morikazu -- The Institute of Electronics, Information and Communication Engineers，1-Feb-2018 ，IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Vol.E101-A no.2 p.367-372 雑誌掲載論文
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Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation / Yorimoto, T.,Higashi, S.,Kaku, H.,Okada, T.,Murakami, H.,Miyazaki, S.,Maki, M.,Sameshima, T. -- The Materials Research Society of Japan，2007 ，Transactions of the Materials Research Society of Japan Vol.32 no.2 p.465-468 雑誌掲載論文
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High mobility sputtered InSb film by blue laser diode annealing / Koswaththage, C.J.,Higashizako, T.,Okada, T.,Sadoh, T.,Furuta, M.,Bae, B.S.,Noguchi, T. -- American Institute of Physics，10-Apr-2019 ，AIP Advances Vol.9 no.4 p.045009-1-045009-5 雑誌掲載論文
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Ultra-high carrier mobility InSb film by rapid thermal annealing on glass substrate / Koswaththage, Charith Jayanada,Okada, Tatsuya,Noguchi, Takashi,Taniguchi, Shinichi,Yoshitome, Shokichi -- American Institute of Physics，1-Dec-2016 ，AIP Advances Vol.6 no.11雑誌掲載論文
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Low-temperature poly Si TFTs via BLDA for a Ne-sputtered Si film using sputtered gate SiO2 / Noguchi, Takashi,Okada, Tatsuya -- Taylor & Francis，2018 ，Journal of Information Display Vol.19 no.4 p.159-164 雑誌掲載論文
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Low-temperature poly-Si TFTs of metal source and drain using blue-laser-diode annealing (BLDA) / Sugihara, Kouya,Shimoda, Kiyoharu,Okada, Tatsuya,Noguchib, Takashi -- Taylor & Francis，2017 ，Journal of Information Display Vol.18 no.4 p.173-176 雑誌掲載論文
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Low-resistance phosphorus-doped Si films through blue laser diode annealing / Noguchi, Takashi,Okada, Tatsuya -- Taylor & Francis，2014 ，Journal of Information Display Vol.15 no.1 p.47-51 雑誌掲載論文
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Appearance of the p-channel performance of poly-Si TFTs with a metal S/D electrode using BLDA aiming for low-cost CMOS / Ashitomi, Takuya,Harada, Taisei,Okada, Tatsuya,Noguchia, Takashi,Nishikatab, Osamu,Ota, Atsushi -- Taylor & Francis，2017 ，Journal of Information Display Vol.18 no.4 p.185-189 雑誌掲載論文
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